Hittite's Four New GaAs pHEMT MMIC LNAs for Military and Microwave Radio
New SMT and Chip LNAs Support High Linearity Applications from 5 to 18 GHz!
MA, May 6, 2010 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, has introduced four new chip and SMT packaged pHEMT GaAs MMIC Low Noise
Amplifiers (LNAs) which are ideal for automotive, broadband, military EW, microwave radio and SatCom applications
from 5 to 18 GHz.
HMC903 are pHEMT GaAs MMIC Low Noise Amplifier chips which are rated from 5 to 10 GHz and 6 to 18 GHz,
respectively. These high linearity LNAs deliver up to 20 dB gain and +28 dBm output IP3, with noise figure as low
as 1.6 dB. The
HMC903 occupy less than 1.5 mm2, feature DC blocked RF I/Os, and are internally matched to 50 Ohms making them
ideal for integration into multi-chip-modules (MCMs) and microwave integrated circuits (MICs).
HMC903LP3E are SMT packaged pHEMT GaAs MMIC Low Noise Amplifiers which are rated from 5 to 10 GHz and 6 to 17
GHz, respectively. These high linearity LNAs deliver up to 19 dB gain and +28 dBm output IP3, with noise figure as
low as 1.7 dB. The
HMC903LP3E are internally matched to 50 Ohms, are housed in RoHS compliant 3 x 3 mm plastic packages and
feature DC blocked RF I/Os.
HMC903LP3E LNAs exhibit excellent input and output return losses and deliver output P1dB of up to +16 dBm,
making them ideal for high dynamic range receiver applications and for driving the LO port of many of Hittite’s
high-level balanced, I/Q and image reject mixers. All four of these self-biased LNAs operate from a single +3.5 V
supply consuming between 80 and 90 mA. In addition, the
HMC903LP3E will accept an optional negative gate supply (Vgg) voltage, allowing the designer to tailor the
output compression point and DC power consumption of the LNA for each application.
Samples and evaluation
PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce
site or via direct purchase order. Released data sheets are available on-line at
Hittite Microwave Corporation is an innovative designer and manufacturer of analog,
digital and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and
millimeterwave applications covering DC to 110 GHz. Our Digital/RFIC/MMIC products are developed using
state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET,
HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired
communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave &
Millimeterwave Communications, Military, Test & Measurement, and Space markets.