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Hittite Press Release - May 6, 2010

Hittite's Four New GaAs pHEMT MMIC LNAs for Military and Microwave Radio

New SMT and Chip LNAs Support High Linearity Applications from 5 to 18 GHz!

Click to visit the Hittite website

Hittite HMC902 and HMC903 pHEMT GaAs MMIC Low Noise AmplifiersChelmsford, MA, May 6, 2010 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced four new chip and SMT packaged pHEMT GaAs MMIC Low Noise Amplifiers (LNAs) which are ideal for automotive, broadband, military EW, microwave radio and SatCom applications from 5 to 18 GHz.

The HMC902 and HMC903 are pHEMT GaAs MMIC Low Noise Amplifier chips which are rated from 5 to 10 GHz and 6 to 18 GHz, respectively. These high linearity LNAs deliver up to 20 dB gain and +28 dBm output IP3, with noise figure as low as 1.6 dB. The HMC902 and HMC903 occupy less than 1.5 mm2, feature DC blocked RF I/Os, and are internally matched to 50 Ohms making them ideal for integration into multi-chip-modules (MCMs) and microwave integrated circuits (MICs).
HMC902 block diagramThe HMC902LP3E and HMC903LP3E are SMT packaged pHEMT GaAs MMIC Low Noise Amplifiers which are rated from 5 to 10 GHz and 6 to 17 GHz, respectively. These high linearity LNAs deliver up to 19 dB gain and +28 dBm output IP3, with noise figure as low as 1.7 dB. The HMC902LP3E and HMC903LP3E are internally matched to 50 Ohms, are housed in RoHS compliant 3 x 3 mm plastic packages and feature DC blocked RF I/Os.
The HMC902, HMC903, HMC902LP3E and HMC903LP3E LNAs exhibit excellent input and output return losses and deliver output P1dB of up to +16 dBm, making them ideal for high dynamic range receiver applications and for driving the LO port of many of Hittite’s high-level balanced, I/Q and image reject mixers. All four of these self-biased LNAs operate from a single +3.5 V supply consuming between 80 and 90 mA. In addition, the HMC902, HMC903, HMC902LP3E and HMC903LP3E will accept an optional negative gate supply (Vgg) voltage, allowing the designer to tailor the output compression point and DC power consumption of the LNA for each application.

 Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available on-line at www.hittite.com.

About Hittite

Hittite Microwave Corporation is an innovative designer and manufacturer of analog, digital and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our Digital/RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.

Beth McGreevy
MarCom Manager
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
sales@hittite.com www.hittite.com

Posted  5/6/2010

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