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Hittite Press Release - April 8, 2010

Hittite Launches Two Low Cost, Highly Flexible RMS Power Detectors

Supports Cellular, LTE/ WiMAX/4G, Test Equipment & Military Applications to 5.8 GHz

Click to visit the Hittite website

HMC1010LP4E & HMC909LP4EChelmsford, MA 04/08/2010 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has launched two new low cost, highly flexible RMS Power Detectors for RF power measurement/control in Cellular/3G, LTE/WiMAX/4G, broadband, test equipment and military applications between DC and 5.8 GHz. The HMC1010LP4E offers 60dB dynamic range over DC to 3.9 GHz and is priced $1.99 each at 10,000 piece volumes. The HMC909LP4E offers a broadband single-ended RF input with 40dB dynamic range over DC to 5.8 GHz and is priced $1.49 each at 10,000 piece volumes. Both products have improved modulation performance and power dissipation coupled with an industry first 4-bit programmable integration bandwidth control interface eliminating the need for cumbersome analog control voltages.

HMC1010LP4E-HMC909LP4E Functional Block DiagramIdeal for the measurement of complex modulated waveforms with large, dynamically changing crest factors, the HMC1010LP4E RMS Power Detector provides 60dB of dynamic range, a nominal logarithmic slope of 37mV/dB and a nominal intercept of -68dBm. The HMC1010LP4E exhibits superior detection accuracy of ±1dB compared with any RMS detector in the market for a price point of only $1.99 at 10,000 piece volumes. It exhibits less than 0.1dB modulation error at 900 MHz, 1900 MHz and 2200 MHz. Temperature stability is excellent with less than ±1 dB total error from -40 to +85°C maintained over the entire DC to 3.9 GHz frequency band.

The HMC909LP4E Single-Ended RMS Power Detector provides 40 dB of dynamic range, a nominal logarithmic slope of 37 mV/dB and a nominal intercept of -70 dBm over its entire DC to 5.8 GHz range. The HMC909LP4E combines superior detection accuracy and better modulation performance than the competition at a price point of only $1.49 at 10,000 piece volumes. It exhibits less than 0.1 dB modulation error at 900 MHz, 1900 MHz, 2200 MHz, and 3500 MHz and 0.4 dB at 5800 MHz. Temperature stability is excellent with less than less than ±1 dB total error from -40 to +85°C maintained over the entire DC to 5.8 GHz frequency band.

Flexibility and dynamic control features have been designed into both the HMC1010LP4E and HMC909LP4E RMS Power Detectors. Both products introduce a new digitally programmable integration bandwidth feature which permits the use of different integration bandwidth settings on the same system platform. The new interface is controlled through 4-bit digital inputs allowing the integration bandwidth (or integration time constant) to be set to a static state or dynamically changed as the system commands. This eliminates the fixed external capacitors and analog voltages required by other competing RMS power detector solutions. The HMC1010LP4E and HMC909LP4E also feature an internal op-amp at their output stage, which can be used to adjust the log slope and log intercept characteristics of the RMS output. The internal op-amp can also be used to configure either of these new RMS Power Detectors as RF power controllers for closed loop applications.

The RF inputs of both the HMC1010LP4E and HMC909LP4E are externally matched to 50 Ohms. Both products are very stable over temperature, operate from a +5V single supply and are housed in a 4x4 mm plastic leadless surface mount package.

Released datasheets for the HMC1010LP4E and HMC909LP4E RMS Power Detectors may be found at Samples and evaluation PC boards are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order.

About Hittite
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.

Beth McGreevy
MarCom Manager
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373

Posted 4/12/2010

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