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Hittite Press Release - March 26, 2010

Hittite's New SMT Power Amplifier is Ideal for WiMAX and LTE/4G Applications New Surface Mount PA Features High Efficiency and Low EVM!

Click to visit the Hittite website


Hittite HMC755LP4EChelmsford, MA, March 26, 2010 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announces the release of a new GaAs InGaP HBT MMIC power amplifier which is ideal for automotive, broadband, WiMAX and LTE/4G applications from 2.3 to 2.8 GHz.

HMC755LP4E Functional Block DiagramThe HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power Amplifier which rated from 2.3 GHz to 2.8 GHz and provides up to 31 dB of gain. This high efficiency amplifier operates from a single +5 V supply, and achieves 28 % power added efficiency (PAE) at +33 dBm of saturated output power. Three power control pins can be used to reduce the RF output power of the PA, or for full power down of the amplifier to conserve DC power. The integrated output power detector pin (VDET) is internally coupled and provides excellent measurement accuracy while requiring only a single external decoupling capacitor. With an OFDM output power of +25 dBm (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5 %, making it ideal for WiMAX and LTE/4G applications. This high performance amplifier is packaged in a compact 4 x 4 mm QFN SMT package, requires a minimum of external matching components, and is rated for operation from -40 °C to +85 °C.

Samples for all die products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available on-line at www.hittite.com.


About Hittite
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.



Contact
Beth McGreevy
MarCom Manager
mcgreevy@hittite.com
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
sales@hittite.com www.hittite.com






Posted 3/31/2010
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