Hittite's ½W & 1W PA Die Are Ideal for Military & Microwave Radio Applications
Two New PA Die Deliver High Gain and High Power Added Efficiency!
MA, March 23, 2010 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, announces the release of two new GaAs pHEMT based power amplifier MMIC die which
are ideal for automotive radar, medical, military, microwave radio, SATCOM and sensor applications from 24 to 29.5
is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates from 24 to 29.5 GHz and
provides 26 dB gain and +28 dBm saturated output power at 18% power added efficiency (PAE). This high linearity
amplifier also delivers high output IP3 of +38 dBm, while consuming only 375 mA from a +6 V supply. For added
power amplifier can also be operated from a +5 V supply, offering up to +26.5 dBm saturated output
Also released is the
three stage GaAs pHEMT MMIC 1 Watt Power Amplifier. This flexible power amplifier operates from 24 to
29.5 GHz with 26 dB gain, and +31 dBm of saturated output power at 18% PAE. The
consumes only 750 mA from a +6 V supply, while delivering +29 dBm output P1dB, and +40 dBm output IP3.
This amplifier can also be operated from a +5 V supply, providing up to +29.5 dBm saturated output power.
The RF inputs and outputs of the
power amplifiers are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules
(MCMs). Both amplifiers are rated for operation from -55 °C to +85 °C, and require no external matching
power amplifier MMICs complement Hittite’s broad line of
linear and power amplifier
products which are offered in chip, SMT and connectorized module formats.
Samples for all die products are available from stock and can be ordered via the company’s e-commerce site or via
direct purchase order. Released data sheets are available on-line at
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824