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RF Micro Devices® Press Release -  August 24, 2009

RFMD® Announces 4G LTE Engagements with
Leading Handset Manufacturers and Baseband Providers RFMD Anticipates Initial Production Revenue Related to 4G LTE
to Commence in the Second Half of Fiscal 2010

RFMDRF6276 block diagram - click for datasheetGREENSBORO, N.C., Aug. 24, 2009 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the Company is engaged with two leading handset manufacturers and two leading baseband manufacturers in the development of fourth generation (4G) Long Term Evolution, or LTE, mobile broadband handsets. Specifically, RFMD is supplying the RF6276 and the RF3280, both of which are 4G LTE power amplifiers (PAs) designed to meet or exceed the data-centric performance requirements of the 4G LTE mobile broadband standard. RFMD anticipates production revenue related to 4G LTE PAs will begin in the second half of fiscal 2010, ending April 3, 2010.

"These expanding customer engagements with leading industry partners clearly demonstrate our commitment to advancing new technologies and accelerating the wide scale deployment of next-generation mobile broadband," said Eric Creviston, president of RFMD's Cellular Products Group (CPG). "RF Micro Devices has a proven history in technology leadership and the support of new air interface standards, including 2G, 2.5G and 3G. Now, with these customer engagements, we are pleased to support the early field deployment of next-generation 4G LTE handsets."

The RF6276 linear LTE power amplifier (PA) is tuned for operation in LTE bands 12 (698 to 716 MHz) and 13 (777 to 792 MHz) and delivers a blend of high-power efficiency and lower current consumption as output power levels decrease. The RF6276 features two digital power modes that adjust bias current and optimize the PA for the desired range of output power, while maintaining the stringent linearity requirements of LTE modulation.

RFMD's RF3280 linear LTE PA is tuned for operation in LTE band 7 (2500 to 2570 MHz) and is optimized for use in linear multimode WCDMA/LTE mobile devices. The RF3280 leverages RFMD's proven quadrature PA technology, which improves end-product immunity to VSWR (otherwise known as "antenna mismatch") and eases end-product implementation. The RF3280 is designed for RF front end architectures utilizing analog bias control in combination with a mated DC-DC converter. This architecture enables dynamic PA loadline adjustments which optimize performance whether the handset is operating in WCDMA or LTE. The combination of analog bias control and a DC-DC converter also optimizes efficiency, at all power levels, and minimizes overall thermal impact. The RF3280 includes an integrated output power detector that supplies a voltage signal relative to the output power level of the PA, thereby reducing board area and simplifying implementation.


Technical features of the RF6276 include:

* Compact, low profile package: 3.0 x 3.0 x 1.0 mm,
* Excellent low-power efficiency
* 2 power-mode states with digital control interfaces
* Highly integrated module requiring no external blocking or decoupling capacitors

Technical features of the RF3280 include:

* Compact module package: 4.0 x 4.0 x 1.14 mm,
* Optimized efficiency at all power levels
* Integrated output power detector
* Highly integrated module requiring no external blocking or decoupling capacitors

Availability and Pricing

Samples of the RF6276 and RF3280 are available immediately, and pricing is available upon request by contacting an RFMD sales representative, or by visiting www.rfmd.com/purchase.



About RFMD
 
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at
www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in quarterly operating results, the impact of global macroeconomic and credit conditions on our business, the rate of growth and development of wireless markets, risks associated with our planned exit from our wireless systems business, including cellular transceivers and GPS solutions, the risk that restructuring charges may be greater than originally anticipated and that the cost savings and other benefits from the restructuring may not be achieved, risks associated with the operation of our wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by implementing innovative technologies, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.




CONTACTS:
 

Doug DeLieto
VP, Investor Relations
+1-336-678-7968,
or Jerry Neal
Executive Vice President
+1-336-678-7001, both of RFMD
Web Site: http://www.rfmd.com










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