RFMD® Expands Family of Packaged Broadband High Frequency Amplifiers
New Components Expand RFMD's Product Portfolio Targeting
Commercial, Military and Space Applications
June 9, 2009 (GLOBE NEWSWIRE) -- IEEE MTT-S --
RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design
and manufacture of high-performance semiconductor components, today announced the addition of three new packaged
broadband GaAs pHEMT high frequency amplifiers to RFMD's SUF family of products. The new amplifiers deliver
exceptional broadband frequency performance and are applicable for commercial, military and space applications.
Based upon GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the SUF-1033, -5033, and -8533
packaged broadband amplifiers broaden the SUF family's range of performance by offering multiple high-frequency
gain blocks featuring various gain levels across bandwidth in small 3 x 3 mm QFN packaged solutions. Each packaged
broadband amplifier also features a single supply voltage, low gain variation versus temperature, and 50 ohm I/O
match, all of which promote ease of design for global customers. With the expansion of RFMD's SUF family of
products, customers across multiple markets can simplify their supply base by selecting amplifiers from a diverse
Jeff Shealy, VP and general manager of RFMD's Defense and Power business unit,
said, "We are very pleased to offer customers in the commercial, military, and space markets these three new SUF
amplifiers delivering excellent frequency performance and gain across bandwidth in size-reduced 3 x 3 mm package
solutions. In the near-term, we anticipate significant customer interest for this family of SUF broadband
amplifiers targeting wideband gain blocks for military and space applications, high IP3 RF drivers, LO and IF
mixer applications, and broadband test and instrumentation equipment."
The SUF-1033, -5033 and -8533 are packaged versions of die-level amplifiers released by RFMD in the second half
of calendar 2008. Supporting both die- and package-level products allows maximum flexibility for customers focused
on multi-chip integration as well as radio board development.
Technical features of the featured
SUF products include:
|P1dB (@ mid band)
|Small Signal Gain(@mid band)
|OIP3 (@ 10GHz)
|NF (@ 10GHz)
||5V w/dropping resistor
||5V w/dropping resistor
Samples of the SUF-1033, -5033 and 8533 broadband packaged amplifiers
are available immediately and product revenue is expected in the September 2009 quarter.
exhibiting at the IEEE MTT-S International Microwave Symposium 2009, June 9-11, at the Boston Convention and
Exhibition Center, Boston, MA, in Booth 2412.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global
leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
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SOURCE RF Micro Devices,
CONTACT: Doug DeLieto, VP, Investor Relations, +1-336-678-7968,
or Jerry Neal, Executive Vice President, +1-336-678-7001, both of RFMD
Web Site: http://www.rfmd.com