RFMD® Introduces Family of Multi-Use Distributed Amplifiers for Broadband, High-Frequency Applications
New Amplifiers Deliver Superior Gain and Output Power, Up to 35 GHz
GREENSBORO, N.C., June 18, 2009 (GLOBE NEWSWIRE) --
RF Micro Devices, Inc. (Nasdaq:RFMD), a global
leader in the design and manufacture of high-performance semiconductor components, today announced the addition of
five new distributed amplifiers for broadband, high-frequency applications. The new amplifiers deliver superior
gain and output power (up to 35 GHz) and are designed to support a wide array of high frequency commercial,
military and space applications.
Based upon GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the SDA-1000 through
5000 series of distributed amplifiers range in operating frequency from DC-20 GHz to DC-35 GHz and represent the
first RFMD amplifiers with operation above 20 GHz. Two follow-on high-performance amplifiers, to be introduced as
an extension to this product family, will deliver similar wideband high-frequency performance and excellent noise
figure and will increase operating frequency up to 50 GHz.
"We are pleased to introduce this new family of
distributed amplifiers which have been designed specifically for high-frequency applications such as modulators,
broadband test equipment, wideband gain blocks in military and space applications and Mach Zehnder Modulator (MZM)
laser drivers and clock drivers in fiber optics. These new products deliver superior performance and provide a
solid foundation for our broadband microwave amplifier product family," said Jeff Shealy, general manager of
RFMD's Defense and Power business unit.
Additionally, Kevin Kobayashi, RFMD Fellow, stated, "We are also
developing products with higher sensitivity, linearity and multi-Watt power output exploiting advanced
semiconductors like Gallium Nitride and Indium Phosphide. Recently, we demonstrated as much as 4 times greater
linearity and output power for GaN-based distributed amplifiers without compromising bandwidth or noise figure
compared to our GaAs pHEMT products. These will be attractive solutions for emerging applications and systems such
as software reconfigurable radios and 100 gigabit ethernet."
The GaN MMIC performance was presented by
Kobayashi at the Radio Frequency Integrated Circuits symposium during the IEEE MTT-S International Microwave
Symposium held June 6 through June 12. Technical features of the featured SDA products include:
|P1dB @ mid band dBm
|Gain @ mid band dB
|IP3 @ mid band* dB
|NF @ mid band dB
|Supply Voltage V
|Supply Current mA
Samples of the SDA-1000, -2000, -3000, -4000 and -5000 distributed
amplifiers are available immediately and product revenue is expected in the September 2009 quarter.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global
leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
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to, statements about our plans, objectives, representations and contentions and are not historical facts and
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numerous risks and uncertainties, including variability in quarterly operating results, the impact of global
macroeconomic and credit conditions on our business, the rate of growth and development of wireless markets, risks
associated with our planned exit from our wireless systems business, including cellular transceivers and GPS
solutions, the risk that restructuring charges may be greater than originally anticipated and that the cost
savings and other benefits from the restructuring may not be achieved, risks associated with the operation of our
wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel
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not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel
and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by
implementing innovative technologies, our ability to bring new products to market, our ability to adjust
production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited
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Securities and Exchange Commission, could cause actual results and developments to be materially different from
those expressed or implied by any of these forward-looking statements.
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SOURCE RF Micro Devices,
CONTACT: Doug DeLieto, VP, Investor Relations, +1-336-678-7968,
or Jerry Neal, Executive Vice President, +1-336-678-7001, both of RFMD
Web Site: http://www.rfmd.com