RFMD® Announces Availability of Gallium Nitride (GaN) Foundry Services
Foundry Services Business Unit to Leverage RFMD's Industry Leadership In Compound Semiconductor Technology and
Manufacturing to Deliver High-Reliability, High-Performance and Price-Competitive GaN Technology
BOSTON, Jun 10, 2009 (GlobeNewswire via COMTEX) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global
leader in the design and manufacture of high-performance semiconductor components, today announced the Company has
formed a gallium nitride (GaN) Foundry Services business unit to supply high-reliability, high-performance and
price-competitive GaN semiconductor technology into multiple RF power markets. The RFMD GaN Foundry Services
business unit will leverage the Company's industry leadership in gallium arsenide (GaAs) manufacturing capacity
and cycle times, as well as a range of new customer services, to drive shorter time-to-market and minimize time
between initial wafer order and final delivery. RFMD is the industry's leading manufacturer of GaAs compound
semiconductors. RFMD's GaN manufacturing is interchangeable with its GaAs manufacturing and directly benefits from
the scale and demonstrated expertise of RFMD's industry-leading wafer fabrication capability.
Buskirk, president of RFMD's Multi-Market Products Group, said, "RFMD's Foundry Services business unit is
providing GaN foundry customers access to RFMD's industry-leading compound semiconductor technology and production
facility and the many benefits of RFMD's scale manufacturing, including reliability, uniformity, cycle time and
quality. RFMD GaN is a breakthrough technology that can change the RF power component industry as a result of its
superior linearity, bandwidth and RF power density. Additionally, RFMD GaN is a "green" technology enabling higher
efficiencies than previously possible, thereby requiring less power consumption to achieve similar performance or
superior performance at similar power consumption levels."
RFMD's offering of GaN foundry services is
distinctive in the industry because RFMD operates the industry's largest GaAs fabrication facility (fab) and has
supplied its customers billions of high-reliability, high-quality compound semiconductor based RF components. By
utilizing its existing, high-volume manufacturing assets, RFMD is able to deliver foundry customers GaN technology
with predictable, industry-leading reliability and increased uniformity. RFMD offers industry-leading cycle times
and estimates its GaN cycle times through its wafer fab are typically 30-40% faster than its competition.
Also, by leveraging RFMD's deep knowledge of semiconductor process models to accurately predict product
performance, RFMD's Foundry Services business unit can lower customer development costs by reducing the number of
prototype runs necessary to meet customer specifications. Customer applications expected to benefit from RFMD GaN
include commercial and defense power applications including wireless infrastructure, CATV line amplifiers,
broadband communication, power amplifiers and various defense radar systems.
Additionally RFMD's Foundry Services customers gain access to a seasoned Foundry Services support team with
first-hand knowledge of foundry customers' expectations and requirements. RFMD's Foundry Services support team
combines more than 50 years of foundry services experience, both as foundry customers and foundry suppliers.
Additionally, RFMD's Foundry Services support team has implemented a full set of services intended to minimize the
total time from order entry to customer delivery. Services include simulation models that enable a high
probability of initial success and business processes that enable little or no queue time.
RFMD GaN is a
next-generation compound semiconductor technology that delivers much higher power density and breakdown voltage
than competing technologies and is ideally suited for very high performance power devices. Typical operating
characteristics of RFMD GaN include operating voltages of 48 (or 65) volts, power density of 6 to 8 watts/mm, FTs
of 11 GHz and F max of 18 GHz and MTTF greater than 100M hours at 150 degrees C channel operating temperature.
RFMD is exhibiting at the IEEE MTT-S International Microwave Symposium 2009, June 9-11, at the Boston Convention
and Exhibition Center, Boston, MA, in booth 2412. Customers interested in foundry services are invited to discuss
the details of their requirements with RFMD's Foundry Services support team.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a
global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
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SOURCE RF Micro Devices, Inc.
VP, Investor Relations
or Jerry Neal
Executive Vice President
+1-336-678-7001, both of RFMD