RFMD Announces Major Gallium Nitride (GaN) Milestones
RFMD Qualifies and Releases First GaN Device
Shipments of RF3931 Unmatched Power Transistors Commence to
High Power Amplifier (HPA) Manufacturers
Nov. 11, 2009
-- GREENSBORO, N.C., Nov. 11, 2009 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today
announced that RFMD(R) has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched
transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to
achieve full product qualification, a process through which RF products are released by RFMD for mass production.
Shipments of the RF3931 have commenced to multiple high power amplifier (HPA) manufacturers, and RFMD anticipates
GaN shipments will increase significantly as new GaN products are introduced.
Bob Bruggeworth, president
and CEO of RFMD, said, "We fully expect RFMD's GaN process technology will play a central role in our corporate
mission to extend and leverage our leadership in RF components and compound semiconductor technologies into
multiple industries. The unique physical properties of RFMD's GaN technology deliver performance that is
unattainable by current competing technologies. Also, RFMD's GaN technology is manufactured in the same
high-volume manufacturing facility as our industry-leading GaAs products, providing RFMD a measurable competitive
advantage. Accordingly, we believe our GaN technology will become a disruptive technology across a broad range of
commercial and defense markets."
Shealy, VP and general manager of RFMD's Defense and Power business unit, said, "We are very pleased to announce
the full product qualification and shipments of RFMD's first GaN product. These achievements are major milestones
for RFMD as we drive adoption of our GaN technology, increase our presence in the high-power RF market and satisfy
our customers' increasing emphasis on 'green' technologies. RFMD's state-of-the-art GaN process technology
delivers superior RF power per square millimeter and superior RF conversion efficiency, as compared to current
The 30-watt RF3931 is part of a family of five RFMD GaN unmatched power
transistors to be released for mass production over the next two quarters. Ranging from 10 watts to 120 watts,
these wide bandwidth, unmatched power transistors enable the development of high-efficiency HPAs for a broad range
of applications, including cellular and WiMAX infrastructure, CATV, military communications, public mobile radio,
radar and radar jammers. In wireless and wireline applications, RFMD's unmatched power transistors enable "green"
architectures that reduce energy costs and improve network efficiency for network operators.
About the RF3931
RFMD's RF3931 unmatched power transistor achieves high efficiency and flat gain over
a broad frequency range in a single amplifier design. The RF3931 is packaged in a hermetic, flanged ceramic
package providing excellent thermal stability through the use of advanced heat sink and power dissipation
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a
global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
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statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of
1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives,
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including variability in quarterly operating results, the impact of global macroeconomic and credit conditions on
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restructuring may not be achieved, risks associated with the operation of our wafer fabrication facilities,
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acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from
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cause actual results and developments to be materially different from those expressed or implied by any of these
VP, Investor Relations
or Jerry Neal
Executive Vice President
+1-336-678-7001, both of RFMD