RFMD Introduces Portfolio of Ultra-Linear Push-Pull Amplifiers for Multiple CATV Infrastructure Applications
New Amplifiers Deliver Best-in-Class Composite Second Order (CSO) Distortion Performance, Enable Future
DOCSIS(R)-Compliant Return Path Networks
DENVER, Oct. 29, 2009 (GlobeNewswire via COMTEX News Network)
-- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio
frequency systems and solutions, today introduced a portfolio of push-pull amplifiers designed for multiple CATV
infrastructure applications. The CGA/CGR product portfolio includes the
amplifiers for forward path, downstream applications and the
amplifiers for return path, upstream applications.
Each amplifier in RFMD's CGA/CGR product
portfolio leverages the Company's proprietary HBT8D InGaP HBT process technology, combined with "push-pull"
architecture, to deliver best-in-class Composite Second Order (CSO) distortion performance. RFMD's push-pull
amplifiers are designed for ultra-linear amplification in current and next generation CATV applications, including
multiple dwelling unit (MDU) amplifiers, low cost line extenders (LE), and customer premises equipment (CPE).
matches the gain of competing +12 Vdc push-pull amplifiers with lower multi-carrier distortion and a
reduction of > 1.5 Watt in DC power consumption. The
offers higher gain and lower multi-carrier distortion performance than the
while consuming 1 Watt less DC power than competing +12Vdc push-pull amplifiers. The
push-pull amplifiers are ideal for applications that require superior broadband amplification and
must conserve DC power, such as CPE, MDUs and battery back-up cable and telephone networks carrying voice, data,
offers the broadband industry's only 25-dB gain surface mount device (SMD) return path amplifier
capable of ultra-linear +50 dBmV RF output per channel performance from 5 to 65 MHz combined with low
multi-carrier distortion, excellent modulation error ratio (MER) and low DC power consumption. The
provides unmatched 5 to 210 MHz bandwidth for ultra-linear return path applications requiring a SMD
package, making it ready now for "mid-split" return path architectures and "future proof" for
soon-to-be-implemented DOCSIS(R) 3.0 compliant 5 to 85 MHz return path networks. The
meet the performance requirements demanded by channel bonding capable return path networks, MDU
class return amplifiers, and CPE cable modems.
RFMD leads the world in III-V semiconductor technology innovation and is the world's leading manufacturer of
GaAs HBT and InGaP HBT process technologies.
Production quantities of the
are available immediately.
RFMD is exhibiting at the SCTE Cable-Tec Expo '09, October 28 -
30, in Denver, CO.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global
leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the
Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited
to, statements about our plans, objectives, representations and contentions and are not historical facts and
typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate,"
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represent management's current judgment and expectations, but our actual results, events and performance could
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these forward-looking statements or publicly announce the results of any revisions to these forward-looking
statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to
numerous risks and uncertainties, including variability in quarterly operating results, the impact of global
macroeconomic and credit conditions on our business, the rate of growth and development of wireless markets, risks
associated with our planned exit from our wireless systems business, including cellular transceivers and GPS
solutions, the risk that restructuring charges may be greater than originally anticipated and that the cost
savings and other benefits from the restructuring may not be achieved, risks associated with the operation of our
wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel
facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may
not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel
and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by
implementing innovative technologies, our ability to bring new products to market, our ability to adjust
production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited
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in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports filed with the
Securities and Exchange Commission, could cause actual results and developments to be materially different from
those expressed or implied by any of these forward-looking statements.
VP, Investor Relations
or Jerry Neal
Executive Vice President
+1-336-678-7001, both of RFMD