RF Micro Devices® Press Release - October 27, 2009
RFMD Releases Industry's First "Green" GaN CATV Amplifier Module Portfolio
Innovative GaN Amplifiers Deliver Industry's Best Low Current Performance
Oct. 27, 2009 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and
manufacture of high-performance radio frequency systems and solutions, today released the industry's first "green"
gallium nitride (GaN) based CATV amplifier modules. The
D10040230PL1 are designed for use as power doubler amplifiers in current and next generation CATV
D10040230PL1 are hybrid power doubler amplifier modules designed to provide the final amplifier stage for CATV
trunk amplifiers, line extenders, and optical nodes. The parts employ GaAs pHEMT and GaN HEMT die and operate from
45 MHz to 1000 MHz. They provide high output capability, excellent linearity and superior return loss performance
with low noise and optimal reliability. With low current and extremely low distortion, the
D10040230PL1 are unconditionally stable under all terminations.
The performance of this new family of CATV amplifiers is on par with other industry-leading GaAs CATV Power
Doublers, also supplied by RFMD, but with 20% lower current consumption (24V/380mA). With these "green"
energy-saving benefits, these products enable designers to fulfill growing requirements for lower energy
consumption and assist network operators in their drive to reduce the overall cost of operating CATV networks. The
D10040230PL1 are the best performing low-current CATV power doubler amplifiers on the market today.
Bob Van Buskirk, president of RFMD's Multi-Market Products Group (MPG), said, "Network operators worldwide are
increasingly focused on reducing the energy costs of operating their wireless and wireline networks. RFMD's
high-performance GaN technology satisfies the industry's drive for "green technology" by enabling advanced RF
components and products that provide industry-leading power and operate at significantly lower power consumption
RFMD leads the world in III-V semiconductor technology innovation and was first to introduce GaN
CATV amplifier modules, with the launch of the D10040200PH1 and D10040230PH1 high output GaN power doubler CATV
amplifier modules in June 2008.
Production quantities of
D10040230PL1 are available immediately.
RFMD is exhibiting at the SCTE Cable-Tec Expo '09, October 28
- 30, in Denver, CO.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global
leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
This press release includes "forward-looking
statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of
1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives,
representations and contentions and are not historical facts and typically are identified by use of terms such as
"may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential,"
"continue" and similar words, although some forward-looking statements are expressed differently. You should be
aware that the forward-looking statements included herein represent management's current judgment and
expectations, but our actual results, events and performance could differ materially from those expressed or
implied by forward-looking statements. We do not intend to update any of these forward-looking statements or
publicly announce the results of any revisions to these forward-looking statements, other than as is required
under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties,
including variability in quarterly operating results, the impact of global macroeconomic and credit conditions on
our business, the rate of growth and development of wireless markets, risks associated with our planned exit from
our wireless systems business, including cellular transceivers and GPS solutions, the risk that restructuring
charges may be greater than originally anticipated and that the cost savings and other benefits from the
restructuring may not be achieved, risks associated with the operation of our wafer fabrication facilities,
molecular beam epitaxy facility, assembly facility and test and tape and reel facilities, our ability to complete
acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from
our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in
production yields, our ability to reduce costs and improve gross margins by implementing innovative technologies,
our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in
response to changes in demand for our products, dependence on a limited number of customers, and dependence on
third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices'
most recent Annual Report on Form 10-K and other reports filed with the Securities and Exchange Commission, could
cause actual results and developments to be materially different from those expressed or implied by any of these
VP, Investor Relations
or Jerry Neal
Executive Vice President
+1-336-678-7001, both of RFMD