Hittite Introduces New DC-700 MHz, 10 kΩ
TIA for Laser Sensor Applications
65 dB Dynamic Range & 150 nA Input RMS Noise over 700 MHz Bandwidth!
MA, 12/02/2009 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions
for communication & military markets, has introduced a new SMT packaged Transimpedance Amplifier (TIA), which is
designed to meet the requirements of opto-electronic laser sensors, FDDI receivers and receiver systems employing
HMC799LP3E TIA provides a single-ended output voltage that is proportional to an applied current at its input
port; typically provided by a photodiode. Operating from a single +5V supply, the
HMC799LP3E draws only 70 mA, and features very low input referred noise of 150 nA RMS over a 700 MHz analog
bandwidth, which is ideal for laser sensors and RF/Fiber applications. The combination of the HMC799LP3E TIA’s
very large electrical dynamic range of 65 dB, and 10 kOhm or 80 dB-Ohms transimpedance translate into excellent
sensitivity at higher data rates. In fully saturated mode, the output voltage swings up to 1 Vp-p.
output of the
HMC799LP3E is internally matched to 50 Ohms, and requires no external matching. The
HMC799LP3E also exhibits excellent gain and output power stability over its full operating temperature range,
while requiring a minimal number of external components.
Housed in a compact RoHS compliant 3 x 3 mm SMT
package and specified for operation from -40°C to +85°C, the
HMC799LP3E complements the previously released
10 Gbps TIA.
Samples and evaluation PC boards for all SMT packaged products are available from stock and
can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available
on-line at www.hittite.com.
About Hittite Microwave Hittite Microwave Corporation
is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation
for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are
developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes
utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range
of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics,
Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.