Cree Speeds Development of High-Performance GaN Doherty Ampliﬁers by 70% with Help of Microwave Office®
Segundo, Calif. — June 10, 2009
— Article describes how capabilities of Microwave Ofﬁce® high-frequency
design software provides first-pass design success of complex 2.1-GHz circuits.
Inc., a major force in the development of Silicon Carbide (SiC) MESFETs and Gallium Nitride (GaN) HEMTs for RF and
microwave wireless applications relies on AWR’s Microwave Office design environment to bring its hybrid-based GaN
power amplifiers to fruition. One of the most impressive (and challenging) was the CDPA21480 Doherty amplifier
that delivers 480 W peak and 80 W average RF power for WCDMA applications in the 2110 to 2170 MHz UMTS band.
using Microwave Office, Cree’s designers were able to optimize the Doherty’s performance over a range of power
levels using individual source and load pull measurements for the Doherty’s carrier and peaking amplifiers. The
design task was aided considerably by the software’s simulation accuracy as well as the accuracy of its models,
which when complemented by Cree’s accurate large-signal models reduced design time by as much as 70%. The
amplifier design required the full breadth of Microwave Office software’s capabilities, from linear
frequency-domain and harmonic balance simulation through electromagnetic (EM) analysis.
The complete story
detailing Cree's design challenge is available at
, and is attached as a PDF file to this media
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others may be trademarks of their respective holders.
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reduces development time and cost for products employed in wireless, high-speed wired broadband, aerospace and
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platforms in that it is inherently open and flexible. AWR continually strengthens its product portfolio with
innovative new technologies that enable faster, more streamlined product development, the most recent of which are
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and Visual System Simulator are trademarks of AWR Corporation. All others may be trademarks of their respective
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