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Because of the high maintenance needed to monitor and filter spammers from the RF Cafe Forums, I decided that it would
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Below are all of the forum threads, including all the responses to the original posts. SDO Post subject: UHF LNA Posted: Tue Aug 26, 2008 5:28 am Captain Joined: Tue Aug 26, 2008 5:18 am Posts: 22 Location: UK Hi, I am new to this forum. I need to design an LNA at 385MHz. Key requirement is NF. Gain/P1dB/IP3 are not not critical. Balanced mode is preferred rather than single ended. Any idea if it is possible to design this LNA to achieve NF <1dB. Thanks. SDO Top IR Post subject: Posted: Thu Aug 28, 2008 4:08 pm Site Admin Joined: Mon Jun 27, 2005 2:02 pm Posts: 373 Location: Germany Hello SDO, I found 2 components from NEC under the following link: http://www.necel.com/microwave/en/param ... hj_dp.html There are the NE3508M04, NE3509M04 which have NF of 0.45dB and 0.4dB respectively. The S-parameters file includes noise data starting from 1.5GHz. However, there are non-linear models available for these devices under the above link. From these models you should be able to derive the NF at low frequencies as well. I will try and find some more transistors for you. You should take care for the gain and the IP3, as this changes from one transistor to another, and the noise mismatch required at the input for achieveing the NF can reduce the gain dramatically and may have some effect on the IP3. If you can provide more information about Gain and IP3 that would be useful. Top SDO Post subject: UHF LNAPosted: Fri Aug 29, 2008 5:34 am Captain Joined: Tue Aug 26, 2008 5:18 am Posts: 22 Location: UK Hi IR, Thanks for your reply. Gain 10-12dB with P1dB of 10dBm. Its really difficult to maintain 10dB gain whilst keeping P1dB at 10dBm. Once again thank you. SDO Top SDO Post subject: UHF LNAPosted: Fri Aug 29, 2008 8:33 am Captain Joined: Tue Aug 26, 2008 5:18 am Posts: 22 Location: UK Hi IR, I have seen data sheet for NE3508M04 and NE3509M04. NE3508M04 seems to be the right candidate for my application in a balanced mode beacause of its low gain and high P1dB biased at 3V,30mA. Gain can be reduced if necessay by using a pad at the out put. I suppose drain voltage/current can be varied to change P1dB. There is one thing which I want to ask you: In the data sheet P1dB is given at 3V, 30mA (NON RF) as 18dBm. What does NON-RF mean? Thanks. Top IR Post subject: Posted: Sat Aug 30, 2008 3:02 pm Site Admin Joined: Mon Jun 27, 2005 2:02 pm Posts: 373 Location: Germany I think that NON-RF means only DC current (Quiescent current) for Id without any input RF signal. And on top of that there is the RF signal which will increase the drain current. This term is confusing, to be on the safe side it is better to consult with the manufacturer. Posted 11/12/2012 | ||||||
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