Qacer Post subject: How do I do this in ADS? Unread postPosted:
Mon Apr 25, 2005 1:24 am Offline Captain Joined: Sat Apr
23, 2005 2:09 pm Posts: 17 Location: Tampa, FL Hello all,
I'm trying to figure out the optimum gamma_S and gamma_L for a transistor.
I saw an example using HP MDS. The example consisted of one BJT with
the port 1 (base) and port 2 (collector) terminated with a variable
termination block that had variable resistance and reactance parameters
(p. 443 on Gonzalez's Micowave Transistor Amplifiers book). How
can I replicate this on ADS? ADS has a termination block for the S-param
simulation, but I don't know how to set it so I can set the source and
load impedance into variables. The idea is that when the simulator
is given specific goals it would return the value for source and load
impedances that meet those goals. I can do this easily by coming up
with an arbitrary input and output matching network. However, I don't
know how to get ADS, just to give me the optimum values, so I can come
up with my own matching network configuration. Thanks!
Top Profile Qacer Post subject: Unread postPosted:
Tue Apr 26, 2005 3:19 pm Offline Captain Joined: Sat Apr
23, 2005 2:09 pm Posts: 17 Location: Tampa, FL I just got
an email from Agilent. It is a fairly simple solution. The termination
block under the S-param palette has internal variables. If you actually
double click on it after placing it on the design space, then you'll
see "Equation Editor" in the pop-up window. By clicking on "Equation
Editor" you will see the list of variables associated with the termination
block: source_real, source_imag, etc..
Posted 11/12/2012
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